SILICON NITRIDE SINTERED COMPACT, ITS MANUFACTURING METHOD, CIRCUIT BOARD, AND POWER SEMICONDUCTO

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PROBLEM TO BE SOLVED : To provide a silicon nitride sintered compact which can attain the increase of strength and toughness and improve heat-dissipating property, its manufacturing method, a circuit board, and a power semiconductor module.SOLUTION : The silicon nitride sintered compact is composed of at least one of crystal particle 1 and a grain boundary phase 3 wherein the former is selected from β-Si3N4 and β-sialon, and further it is characterized in that it has an Al-rich area 5 where the amount of Al is more than the other parts of the crystal particle 1 in the crystal particle 1, and in that the Al-rich area 5 is covered with a rare earth element-containing covering layer 6. Thereby, the strength and the toughness of the sintered compact can be improved, and heat conductivity of the sintered compact can be increased, and the heat-dissipating property can be improved.COPYRIGHT : (C)2010, JPO&INPIT