MANUFACTURING METHOD FOR SILICON WAFER

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PURPOSE : A manufacturing method for a silicon wafer is provided to suppress the slip for a rapid heating / cooling process by controlling the heating / cooling speed.CONSTITUTION : A silicon single crystal ingot is grown up with Czochralski method. The silicon epitaxial ingot is cut by a plurality of silicon wafers(W). A first thermal process is performed under a first gas including an oxygen gas of 0.01 vol.%% to 1.00 vol.%% and a rare gas. A second thermal process is performed under a second gas including an oxygen gas of 20 vol.%% to 100 vol.%% and a rare gas.COPYRIGHT KIPO 2010