METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

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PROBLEM TO BE SOLVED : To provide a manufacturing method of an insulating film capable of securing reliability even if its film thickness is thin, as an insulating film used in a semiconductor integrated circuit, and to provide a high quality insulating film at a low substrate temperature on a substrate having an insulating surface enlargeable in area such as a glass, in particular. SOLUTION : A monosilane gas (SiH4), nitrous oxide (N2O) and a rare gas are introduced into a chamber, and high density plasma is generated under a pressure of 10-30 Pa to form the insulating film on the substrate having an insulating surface such as a glass. After that, the supply of the monosilane gas is stopped, and the nitrous oxide (N2O) and the rare gas are introduced without exposing them to the atmosphere to apply plasma treatment onto the insulating film surface. COPYRIGHT : (C)2009, JPO&INPIT