YTTRIUM OXIDE MATERIAL, MEMBER FOR USE IN SEMICONDUCTOR MANUFACTURING APPARATUS, AND METHOD FOR PR

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PURPOSE : An yttrium oxide material, a member for a semiconductor manufacturing apparatus, and a manufacturing method of the yttrium oxide material are provided to improve volume resistivity by compound or SiC included in yttrium oxide.CONSTITUTION : A manufacturing method of the yttrium oxide material comprises the following steps : a step for mixing inorganic particle composed of compound including Y2O3, SiC, rare earth element, Si, O, and N; and a step for sintering the inorganic particle at 1500°C ~ 1850°C. In the sintering process, Si3N4 and Y2O3 as the inorganic particle are mixed and are sintered. In the sintering process, at least one or more kinds among YF3, MgF2, CaF2, and AlF3 are mixed and are sintered. In the sintering process, the inorganic particle is sintered at 1600°C ~ 1700°C.© KIPO 2009