AlN HETEROEPITAXIAL CRYSTAL, METHOD FOR PRODUCING THE SAME, BASE SUBSTRATE FOR GROUP III NITRIDE F

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Disclosed is a method for producing a highly crystalline high-quality AlN heteroepitaxial crystal by sputtering. Specifically, after exposing the surface of a sapphire substrate to a plasma using a nitrogen gas or a mixed gas of a nitrogen gas and a rare gas, a reactive sputtering is performed using a nitrogen gas or a mixed gas of a nitrogen gas and a rare gas, while maintaining vacuum, so that AlN is heteroepitaxially grown on the surface of the sapphire substrate.