GaN-based semiconductor light emitting device and manufacturing method thereof

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PROBLEM TO BE SOLVED : To provide a semiconductor light emitting element and its manufacturing method by which a light emitting diode or a semiconductor laser can emit a yellow light or a red light by using Ga1-xInxN as a light emitting material as well as lights having various wavelengths by using a nitride-based III-V compound semiconductor containing Ga1-xInxN as a light emitting material. SOLUTION : A semiconductor light emitting element using a nitride-based III-V group compound semiconductor uses as a light emitting material a nitride- based III-V compound semiconductor doped with a rare-earth element. For example, a GaN-based semiconductor light emitting element uses an Eu-doped Ga1-xInxN active layer 6. The concentration of rare-earth element in the nitride- based III-V compound semiconductor is 1×1018-1×1021 cm-3. The growth temperature of a light emitting layer is 500-800 deg.C.