SPUTTERING TARGET OF ZnO AND MANUFACTURING METHOD THEREFOR

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PROBLEM TO BE SOLVED : To provide a sputtering target of ZnO, which has high sintered density, hardly causes abnormal electrical discharge even when high voltage has been applied, and is suitable as a sputtering target material for use in forming a vapor deposition film in a wide range, and to provide a manufacturing method therefor. SOLUTION : The sputtering target of ZnO is formed of a pellet of a sintered compact which contains ZnO as a main component and an oxide of a rare-earth element, and has a relative density of 97.5% or more. The content of the oxide of the rare-earth element is preferably 0.05 to 10 mass%. The sputtering target is formed by mixing a ZnO powder of which the average particle size of the primary particle is 0.1 to 5.0 μm, with an oxide powder of the rare earth element, of which the average particle size of the primary particle is 1/5 to 1/2 of the average particle size of the ZnO powder, so that the content of the oxide of the rare-earth element can be in the above range, then adding a binder to the mixture, press-forming it, demolding it, and baking it at 1, 000°C or higher. The manufacturing method therefor is also disclosed. COPYRIGHT : (C)2009, JPO&INPIT