HETERO-JUNCTION FIELD EFFECT TRANSISTOR, AND MANUFACTURING METHOD OF HETERO-JUNCTION FIELD EFFECT T

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PROBLEM TO BE SOLVED : To provide a hetero-junction field effect transistor in which a recess gate can be formed with good reproducibility, and to provide a manufacturing method of the hetero-junction field effect transistor. SOLUTION : The hetero-junction field effect transistor includes a first layer made of a nitride-based group III-V compound semiconductor; a second layer formed on the first layer and made of a nitride-based group III-V compound semiconductor containing a rare earth element; a pair of third layers formed on the second layer at an interval and made of a nitride-based group III-V compound semiconductor; a gate electrode formed on at least one part of a region of the second layer between the pair of third layers; a source electrode formed on any one of the pair of third layers; and a drain electrode formed on the other of the third layers. The manufacturing method of the hetero-junction field effect transistor is also provided. COPYRIGHT : (C)2008, JPO&INPIT