INTEGRATED TRANSISTOR DEVICES

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A metal-oxide-compourtd semiconductor.field effect transistor structure (10) includes a first layer in contact with an upper surface (13) of a III-V compound semiconductor wafer structure and that contains Al Ga, and Oxygen, such as a mixture aluminum oxides and gallium oxides, and a second layer (14) that is insulating, that may contain substantial amounts of three elements, that may comprise a ternary- compound including a transition metal, aluminum or gallium, and oxygen, or a rare- earth, aluminum or gallium, and oxygen. Together the first layer and the second insulating las er form a gate insulating structure for a field effect transistor The initial essentially gallium/aluminum/oxygen layer serves to passivate and protect the underlying compound semiconductor surface from the second insulating oxide layer