NONVOLATILE MEMORY ELEMENT

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A nonvolatile memory element in which Rb1-yMbyMnO 3 exhibiting higher insulation performance than Ra1-x MaxMnO3 is interposed between the Ra1-x MaxMnO3 and a metal having a shallow work function or a lower electronegativity in order to improve resistance variation characteristics and switching characteristics and to control the resistance variation characteristics. (In the formulae, Ra and Rb represent rare earth elements and are solid solutions of one or more than one kind of rare earth elements. Average ionic radius of the Rb is smaller than that of the Ra. Ma and Mb represent alkaline earth metals and are solid solutions of one or more than one kind of alkaline earth metals. 0

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