MEMORY ELEMENT AND MEMORY DEVICE

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PROBLEM TO BE SOLVED : To provide a memory element in which changes of an action threshold voltage and a resistance value in a high resistance state or a low resistance state are small when repeating writing deletion cycles. SOLUTION : A storage layer 3 is constituted to be pinched between a first electrode 2 and a second electrode 4. The storage layer 3 is formed by laminating an oxide layer 31 and an ionized layer 32 containing Cu or Ag to be ionized. The oxide layer 31 consists of a rare earth element oxide or a copper oxide. The ionized layer 32 constitutes a memory element 10 containing a nitride of one or more sorts of elements chosen from S, Se and Te. COPYRIGHT : (C)2008, JPO&INPIT