CMP ABRASIVE, AND METHOD OF POLISHING SUBSTRATE

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PROBLEM TO BE SOLVED : To provide a CMP abrasive and a polishing method for carrying out polishing a silicon oxide film without polishing scratches at a high speed and flatly in a CMP technique of flattening an interlayer insulation film, a BPSG film, and an insulation film for shallow trench separation. SOLUTION : The CMP abrasive contains tetravalent metal hydroxide particles, a nitrogen-containing heterocyclic compound and agent. The amount of the nitrogen-containing heterocyclic compound is preferably 0.01-5 pts.mass with respect to CMP abrasive 100 pts.mass. The metal hydroxide is a rare earth metal hydroxide or zirconium hydroxide wherein a specific surface area is 100 m2/g or above and secondary grain diameter is 300 nm or below in median value. COPYRIGHT : (C)2008, JPO&INPIT