FABRICATION PROCESS OF SEMICONDUCTOR DEVICE

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PROBLEM TO BE SOLVED : To obtain a TFT in which the off current value is lowered while suppressing variation in order to enhance the operation characteristics of a semiconductor device and to reduce power consumption. SOLUTION : In order to perform gettering of the metal element of a first silicon film crystallized using a metal element for accelerating crystallization of silicon, a second silicon film containing rare gas and having an amorphous structure is used. Laser irradiation is performed twice by changing the atmosphere. When the second laser irradiation is performed such that the irradiation region becomes in inert gas atmosphere, planarity of the first silicon film is enhanced. COPYRIGHT : (C)2008, JPO&INPIT