A method of manufacturing a semiconductor light-emitting element

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PROBLEM TO BE SOLVED : To enable realization of a light emitting element which uses mainly silicon having various advantages. SOLUTION : A semiconductor 10 for a light emitting element includes a porous silicon layer 12 containing erbium (not shown) as its light emission center and a silicon nitride film 14 formed on a surface of the porous silicon layer 12. The semiconductor can be drastically improved in a PL (photoluminescence) intensity at room temperature over a single crystalline silicon or porous silicon containing a rare earth element alone as its light emitting center. Accordingly, since silicon is spread as the material of LSI having a high integration density, there can be realized an opto-electronic integrated circuit(OEIC) which has a high integration density.