EPITAXIAL FILM, PIEZOELECTRIC ELEMENT, FERROELECTRIC ELEMENT, MANUFACTURING METHODS OF THEM, AND

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PROBLEM TO BE SOLVED : To provide an epitaxial film having a uniform composition, superior crystal orientation and a large area, and its manufacturing method, to provide a piezoelectric element and a ferroelectric element having a single orientational crystal structure, superior characteristics and large areas by using the epitaxial film having superior lattice matching as a buffer layer to a Si substrate, and their manufacturing methods, and a large liquid discharge head having superior liquid discharging performance. SOLUTION : The Si substrate having an SiO2layer with a film thickness of 1.0 nm or larger to 10 nm or smaller on a surface is heated by the use of a metal target represented by the following composition formula (1) : yA(1-y)B (in which A is element including rare earth elements including Y and Sc, B is Zr, and y is a numeric value of 0.03 or larger to 0.20 or smaller). On the substrate, the epitaxial film represented by the following composition formula (2) : xA2O3-(1-x)BO2(in which A and B are the same metal elements as A and B of the formula (1), and x is a numeric value of 0.010 or larger to 0.035 or smaller) is formed. COPYRIGHT : (C)2009, JPO&INPIT