MAGNETORESISTANCE EFFECT DEVICE AND, EQUIPPED THEREWITH, MAGNETIC HEAD, MAGNETIC RECORDING APPARA

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[PROBLEMS] To provide a magnetoresistance effect device that regarding a CPP type magnetoresistance effect device, realizes a high MR ratio through improvement of a material of laminated ferri-pinned layer; a process for producing the magnetoresistance effect device; and, constructed using the device, a magnetic head, magnetic disc apparatus and magnetic memory unit. [MEANS FOR SOLVING PROBLEMS] There is provided a magnetoresistance effect device characterized by having a substrate and, sequentially superimposed thereon, an antiferromagnetic layer, a first fixed magnetized layer, a nonmagnetic binding layer, a second fixed magnetized layer, a nonmagnetic interlayer and a free ferromagnetic layer, wherein either the first fixed magnetized layer or the second fixed magnetized layer has a film from a material consisting of an alloy containing a rare earth element or a rare earth element per se. Preferably, the material consisting of an alloy containing a rare earth element or a rare earth element per se is one represented by the formula (CoaFe(1-a))(1-b)Xb (wherein X is at least one of Sm, Eu, Gd, Tb and Dy, and a and b are atomic composition ratios, satisfying the relationships 0≤a≤1 and 0.05≤b≤1).