Garnet single crystal substrate and its manufacturing method

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PROBLEM TO BE SOLVED : To provide a garnet single crystal substrate for growing a BIG (bismuth-substituted rare-earth iron garnet single crystal) thick film having a low dislocation density. SOLUTION : The garnet single crystal substrate has a dislocation density of ≤1 peaces/cm2and a lattice constant of 1.2496±0.0004 nm, and is expressed by compositional formula : Gd2.68+8xCa0.32-xGa4.02-4xMg0.33-xZr0.65-2xO12(wherein, 0.0042O3), calcium oxide (CaO), gallium oxide (Ga2O3), magnesium oxide (MgO), and zirconium oxide (ZrO2) in following atomic ratios : Gd=2.68+8x, Ca=0.32-x, Ga=4.02-4x, Mg=0.33-x, and Zr=0.65-2x (wherein, 0.004COPYRIGHT : (C)2003, JPO