MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

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PROBLEM TO BE SOLVED : To provide a method of manufacturing a memory device which is manufactured by forming a vanadium dioxide thin film, and to provide a memory device such as a resistance change type nonvolatile memory manufactured by it. SOLUTION : The method of manufacturing the memory device includes a step S1 of installing a substrate and a target material consisting of vanadium or vanadium oxide in a vacuum container, a negative pressure step S2 in the vacuum container, a gas introduction step S3 of introducing a rare gas and oxygen gas into the vacuum container, a heating step S4 of heating the substrate by a heating means in the vacuum container, a step S5 of applying a high frequency voltage to the target material, and a step S6 of forming electrodes consisting of an electrically conductive metal contiguous to the vanadium dioxide thin film formed on the substrate. Further, the memory device comprises the substrate on which the vanadium dioxide thin film undergoing metal-insulator phase transition is manufactured, and the electrodes consisting of the electrically conductive metal contiguous to the vanadium dioxide thin film. COPYRIGHT : (C)2008, JPO&INPIT