PLASMA CLEANING PROCESS AND PLASMA CVD METHOD

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Disclosed is a plasma cleaning process comprising a step (S1) wherein a cleaning gas containing an NF3 gas is introduced into a process chamber of a plasma CVD apparatus, which is used for depositing a silicon nitride film on the surface of an object to be processed, thereby removing deposits within the process chamber; a following step (S2) wherein a plasma is generated by introducing a gas containing a hydrogen gas into the process chamber, thereby removing fluorine remaining in the process chamber; and a next step (S3) wherein a plasma is generated by further introducing a gas containing a rare gas into the process chamber, thereby removing hydrogen remaining in the process chamber.© KIPO & WIPO 2009