ELECTRICAL CONTACTS FOR INTEGRATED CIRCUITS AND METHODS OF FORMING USING GAS CLUSTER ION BEAM PROCES

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Embodiments of the invention describe electrical contacts for integrated circuits and methods of forming using gas cluster ion beam (GCIB) processing. The electrical contacts contain a fused metal-containing layer (427) formed by exposing a patterned structure to a gas cluster ion beam (407) containing a transition metal precursor or a rare earth metal precursor.