METHOD FOR PRODUCING SiC SINGLE CRYSTAL

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PROBLEM TO BE SOLVED : To provide a method for producing an SiC single crystal where growing velocity is enhanced without increasing temperature gradient and where a flat growing surface can be stably maintained at the same time. SOLUTION : The SiC single crystal is grown from an SiC seed crystal held directly below the surface of an Si molten liquid as a starting point while maintaining such a temperature gradient that the temperature is reduced from the inside of the molten liquid toward the surface of the Si molten liquid in a graphite crucible. At least one kind of rare earth elements and one kind among Sn, Al and Ge are added in the Si molten liquid. It is favorable that a rare earth element is Dy or Ce, the addition amount of the rare earth element is 5-30 at.% of the total Si molten liquid containing an added element, the addition amount of one kind among Sn, Al and Ge is 5-20 at.% and Sn among Sn, Al and Ge is added. COPYRIGHT : (C)2008, JPO&INPIT