OBJECT PROCESSING APPARATUS AND PLASMA FACILITY COMPRISING THE SAME

文件类型：PDF文档
文件大小：693K
A processing apparatus for subject of the present invention uses a high voltage electrode and a ground electrode, and generates plasma under atmospheric pressure in a reaction passage through which a to-be-processed subject passes. For example, even fluorocompound such as PFC including CF4 can effectively be decomposed because the fluorocompound is brought into contact with plasma in a small space for sufficient time, and the apparatus has a small and simple structure. Therefore, the apparatus can be added to each process chamber.