MULTILAYER THERMOELECTRIC TRANSDUCER

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There is provided a multilayer thermoelectric transducer including a p-type layer containing a p-type semiconductor material, an n-type layer containing an n-type semiconductor material, and an insulating layer containing an insulating material. The p-type layer is joined to the n-type layer to constitute a pn junction pair; the p-type semiconductor material is directly joined to the n-type semiconductor material in a part of a region of the junction surface between the p-type layer and the n-type layer while, in the other region of the junction surface, the p-type semiconductor material is joined to the n-type semiconductor material with the insulating layer being interposed therebetween; the p-type semiconductor material is an alloy containing Ni; the n-type semiconductor material is a composite oxide containing Sr, Ti, Zr, a rare earth element and O with Ti and Zr satisfying a molar ratio represented by Zr/(Ti+Zr) of 0.0001≤Zr/(Ti+Zr) 0.1; and the insulating material is a partially stabilized zirconia that contains at least one metal oxide M selected from the group consisting of Y2O3 and CaO, and ZrO2 with ZrO2 and M satisfying a molar ratio represented by M/(ZrO2+M) of 0.026≤M/(ZrO2+M)≤0.040.