电子半导体元件及其制备方法

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The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first hole transport layer, wherein the first hole transport layer comprises (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal salts and from electrically neutral metal complexes comprising a metal cation and a at least one anion and/or at least one anionic ligand consisting of at least 4 covalently bound atoms, wherein the metal cation of the electrical p-dopant is selected from alkali metals alkaline earth metals, Pb, Mn, Fe, Co, Ni, Zn, Cd rare earth metals in oxidation state (II) or (III) Al, Ga, In and from Sn, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W in oxidation state (IV) or less provided that a) p-dopants comprising anion or anionic ligand having generic formula (Ia) or (Ib)wherein A 1 , A 2 , A 3 and A 4 are independently selected from CO, SO2or POR 1 R 1 = electron withdrawing group selected from the group comprising halide, nitrile, halogenated or perhalogenated C1to C20alkyl, halogenated or perhalogenated C6to C20aryl, or halogenated or perhalogenated heteroaryl with 5 to 20 ring-forming atoms B 1 , B 2 , B 3 and B 4 are same or independently selected from substituted or unsubstituted C1to C20alkyl, substituted or unsubstituted C1to C20heteroalkyl, substituted or unsubstituted C6to C20aryl, substituted or unsubstituted C5to C20heteroaryl, or B 1 and B 2 form a ring b) p-dopants consisting of a divalent or trivalent metal cation and a carboxylate anion, and c) p-dopants consisting of Li cation and an anion selected from perchlorate and tetrafluoroborate are excluded, and a method for preparing the same.