SEMICONDUCTOR DEVICE HAVING STRAINED-Si CHANNEL BY IMPROVING GATE INSULATING LAYER OR STRUCTURE OF G

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PURPOSE : A semiconductor device is provided to suppress deterioration of a gate insulating layer and an increase of leakage current by using a single crystalline rare earth oxide as the gate insulating layer. CONSTITUTION : An insulating layer is formed on a substrate(11). A first gate electrode is formed with a first single crystalline semiconductor material formed on the insulating layer. A first gate insulating layer is formed with a first single crystalline rare earth oxide and is formed on the first gate electrode. A single crystalline Si layer(13) is formed on the first gate insulating layer. A second gate insulating layer(14) is formed with a second single crystalline rare earth oxide and is formed at a position opposed to the first gate insulating layer on the single crystalline Si layer. A second gate electrode is formed with a second single crystalline semiconductor material and is formed on the second gate insulating layer. © KIPO 2007