METHOD OF MANUFACTURING ELECTRONIC DEVICE MATERIAL

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PROBLEM TO BE SOLVED : To provide a method of manufacturing an electronic device structure (such as a high performance MOS semiconductor device) having excellent electric characteristics using an SiO2 film and an SiON film having extremely thin (such as 2.5 nm or less) film thickness as an insulating film, and using polysilicon, amorphous silicon, and SiGe as an electrode. SOLUTION : By irradiation of microwave on a wafer W via a planar antenna member SPA under an existence of a processing gas containing oxygen and rare gas, plasma is formed containing the oxygen and rare gas (or plasma containing nitrogen and rare gas, or plasma containing nitrogen, rare gas, and hydrogen). By using this plasma, an oxide film (or oxynitride film) is formed on the surface of the wafer, thereby forming an electrode such as polysilicon as needed, and an electronic device structure is thus formed. COPYRIGHT : (C)2007, JPO&INPIT