Heterjunction bipolar transistor with tunnelling mis emitter junction

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A manufacturing method and structure for a MIS Heterojunction Bipolar Transistor (HBT) is provided including a GaAs substrate which has a collector region; a base layer coupled to the collector region; the ultra-thin insulating layer including a rare earth oxide coupled to the base layer; and an emitter structure including metal layers coupled to the ultra-thin insulating layer.