The target phase change material and its manufacturing method

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PROBLEM TO BE SOLVED : To realize a phase change recording layer with a high crystallization speed and good thermal stability by preventing discrepancy between the composition of a target and that of recording layer, when the phase change recording layer is formed by a sputtering method through the use of the target which is predominantly composed of antimony and tellurium and which contains an accessory component for increasing the crystallization speed and enhancing the thermal stability. SOLUTION : This phase change material target is used when the phase change recording layer is formed by the sputtering method. The target contains antimony, tellurium, an element R (at least one kind of element selected from among a rare-earth element, manganese, chromium, titanium, zirconium, hafnium, vanadium, niobium, zinc, aluminum and tin), and an element M (at least one kind of element selected from among elements except all of the element R, antimony and tellurium). The target has a structure wherein R-M alloy particles containing the element R and the element M are dispersed in a matrix phase containing antimony and tellurium. COPYRIGHT : (C)2004, JPO