Composition for cleaning semiconductor device

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PURPOSE : Provided is a composition for cleaning semiconductor devices, which solves a re-adsorption problem of particles, has improved detergency to metal ions by using ozone as an oxidant, and prevents corrosion in metal wiring. CONSTITUTION : The composition for cleaning semiconductor devices comprises (i) 3-5vol%% of 10%% citric acid as an organic acid, (ii) 3-7vol%% of 31%% hydrogen peroxide or 1-150ppm of ozone as an oxidant, (iii) one, two or more additives selected from the group consisting of fluorine-based anionic surfactants, hydrofluoric acids, and ammonium fluoride for preventing adsorption of particles, and (iv) the balance of an ultrapure water. The fluorine-based anionic surfactant is a fluoroalkylsulfoneamide compound. © KIPO 2006