CMOS SEMICONDUCTOR DEVICE

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PROBLEM TO BE SOLVED : To provide a CMOS semiconductor device whose nMOSFETs and pMOSFETs have metal gates made of the same type of material, and which provides ease of circuit integration. SOLUTION : In the semiconductor device comprising the nMOSFETs and the pMOSFETs, the metal gate electrodes of the nMOSFETs and the pMOSFETs are made of the same metallic material such as a rare earth metallic element of Ti, Zr, Hf, Ta, or La or the like or a boride, silicide, or germanide compound of the metallic elements, and insulation films of the nMOSFETs and the pMOSFETs at least at the side of the metal electrodes are made of different materials. COPYRIGHT : (C)2006, JPO&NCIPI