Silicon dioxide based material producing method for fabricating integrated circuit, involves formin

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The invention relates to a manufactoring process of a material (60) with weak permittivity, including/understanding a stage of formation of cavities (66) in silicon dioxide by establishment of a gas raredifférent of helium and neon. The invention also relates to a component including/understanding of pistesmetallic and of the areas separating the aforementioned metal tracks, the aforementioned areas containing of dioxide desilicium to weak permittivity including/understanding of the cavities (66) formed by establishment of a gas raredifférent of helium and neon.