Manufacture of infrared detector

文件类型：PDF文档
文件大小：95K
A method for manufacturing an infrared ray detector element utilizing a bolometer thin film having Bi1-xAxMn1O3 (element A being at least one element selected from a rare earth metal or an alkaline earth metal, 0<=x<1) as a main component. The method comprises a step of forming an oxide thin film having a metallic composition of Bi : A : Mn=1-x : X : 1 by sputtering at a substrate temperature of equal to or above 100° C. and less than 500° C. within a gas atmosphere of containing oxygen or ozone. The second step is applying a heat treatment to the oxide thin film within a gas atmosphere containing oxygen or ozone to reduce the volume resistivity of the oxide thin film to a level at which an infrared ray detector circuit can operate. Thus, the bolometer having Bi1-xAxMn1O3 as a main component can be functioned as a bolometer and an infrared ray detector element of a high detectivity can be put in mass-production.