SPUTTERING TARGET FOR FORMING ELECTRODE FILM FOR SEMICONDUCTOR DEVICES AND METHOD OF ITS FABRICATION

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Disclosed is a sputtering target that may be used to provide an electrode for FPD devices. The target and resulting electrode inhibit the generation of hillocks and have reduced resistivity. These properties render the electrode suitable for use as a thin film transistor in an active matrix liquid crystal display and the like. The electrode for semiconductor devices is made of an aluminum-based alloy containing one or more alloying elements selected from rare earth alloying elements present in a total amount from 0.01 to 3 at % . The method of fabricating a target that, when sputtered, will provide for an electrode includes the steps of continuous casting with electromagnetic stirring, in which the elements mentioned above are dissolved in an A1 matrix, and precipitating part or all of the elements dissolved in the A1 matrix as intermetallic compounds during solidification. The target is made of an aluminum-based alloy containing the above elements by thermo mechanical fabrication, rolling or extrusion process.