Polymer, Resist Composition and Patterning Process

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A polymer comprising recurring units of formulae (1) and (2) wherein Rand Rare H or methyl, Rand Rare C1-15 alkyl, Rto Rare H, or Rand R, and Rand Rform trimethylene or 1, 3-cyclopentylene and having a Mw of 1, 000-500, 000 is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution and etching resistance and lends itself to micropatterning with electron beams or deep-UV.