METHOD FOR PRODUCING POLYCRYSTALLINE SILICON AND POLYCRYSTALLINE SILICON FOR PHOTOVOLTAIC POWER GENE

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PROBLEM TO BE SOLVED : To make an external heating means for heating a core material for the precipitation and adhesion of a polycrystalline silicon unnecessary even in the period of an initial heating, to allow enhanced precipitation and adhesion speed from an initial stage of the reaction, and to further allow repeated use of the core material. SOLUTION : In a method for precipitating high purity polycrystalline silicon, comprising supplying a silane gas as a raw material onto a red-hot seed rod at a high temperature in a sealed reaction furnace and subjecting the silane gas to pyrolysis or the reduction by hydrogen, a member made of an alloy having a re-crystallization temperature of ≥1, 200°C is used as the seed rod. Preferably, the member made of an alloy having a re-crystallization temperature of ≥1, 200°C is made of Re-W, W-Ta, Zr-Nb or a titanium-zirconium-carbon-added molybdenum (TZM) alloy. The member is a wire having a diameter of ≥0.5 mm, a sheet or a square bar having a thickness of ≥1 mm or a tube having a diameter of ≥1 mm, a thickness of ≥0.2 mm and an inner diameter of ≤5 mm. Further, preferably, the sheet, the wire, the square bar or the tube has a taper, and more preferably, the tube is a hollow double tube having a taper. COPYRIGHT : (C)2006, JPO&NCIPI