CMP ABRASIVE FOR SEMICONDUCTOR INSULATION FILM AND ITS MANUFACTURING METHOD, AND METHOD OF POLISHIN

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PROBLEM TO BE SOLVED : To provide a CMP abrasive capable of rapid and planar polishing of a silicon oxide film without making any polishing scratches in a CMP technology for planarizing an interlayer insulation film, a BPSG film, and an insulation film for shallow trench isolation; and also to provide its manufacturing method and a method of polishing a substrate. SOLUTION : The CMP abrasive contains water and organic high molecular particles whose surfaces are coated with tetravalent metal hydroxide particles, and may further contain a water soluble polymer. As for the metal hydroxide, a rare earth metal hydroxide or zirconium hydroxide is preferably used which has a specific surface area of 100 m2/g or above and has a value of 300 nm or below for the median of secondary grain diameter. The organic high molecular particles have an average grain diameter which is larger than the median of the secondary grain diameter of the metal hydroxide particles and not more than 50 μm, and has a zeta potential of 0 mV or below and a glass transition temperature of 30°C or above.