SEMICONDUCTOR LIGHT EMITTING ELEMENT AND ITS MANUFACTURING METHOD

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PROBLEM TO BE SOLVED : To provide a semiconductor light emitting element which realizes a light emission of desired tone having strong light emission intensity without arising an increase in an operating voltage or particularly a light emission including a red color or a light emission of white color by a simple method. SOLUTION : This semiconductor light emitting element 10 includes a sapphire substrate 11, a ground layer 12 made of a GaN, an n-type contact layer 13 made of the GaN, an n-type clad layer 14 made of n-type Al0.15Ga0.85N, a light emitting layer 15 made of a quantum well structure where In0.15Ga0.85N well layer and a GaN barrier layer are alternately laminated in 3 periods, a p-type clad layer 16 made of a p-type Al0.15Ga0.85N, a p-type contact layer 17 made of a p-type GaN, and a rare earth element-doped layer 18 made of GaN doped with Eu of rare earth element.