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PROBLEM TO BE SOLVED : To provide a method for manufacturing a single crystal for manufacturing a garnet single crystal substrate having excellent quality required for growing a Bi-substituted rare earth iron garnet single crystal.
SOLUTION : In the method for manufacturing the single crystal, a single crystal 4 is manufactured by bringing a seed crystal 5 into contact with the surface of a raw material melt 3 filled in a crucible 2 from upward, and gradually pulling the seed crystal 5 while rotating it. Before contact of the seed crystal 5 with the melt 3, the temperature of the melt 3 in an area where bubbles are floating is lowered so as to solidify the area once by controlling high frequency current flowing through a coil 1, and the solidified material is sent to the bottom by the above mentioned method. Thereby, it is possible to remove solid particles floating in the area or the solid particles and the bubbles.
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