TAPE CARRIER FOR SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

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PROBLEM TO BE SOLVED : To provide a tape carrier for a semiconductor device in which migration resistance is not deteriorated even if a pitch of copper wiring is made fine, and to provide the manufacturing method of the carrier. SOLUTION : An adhesive layer 4 is formed on one face of a polyimide film 1. An Ni-Cr alloy layer to which a rare earth element is added and in which heat resistance is improved, and a seed layer 2 with a copper layer formed on the Ni-Cr alloy layer, are formed on the adhesive layer 4 by sputtering. A base material 10 is constituted on the seed layer 2 by forming a copper electroplating layer 3 by using a plating device. Migration resistance can be improved in the tape carrier where a copper wiring pattern is formed on the base material 10 with reduction of water absorption by the bonding layer 4 and heat resistance by the seed layer 2. COPYRIGHT : (C)2006, JPO&NCIPI