FIELD-EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM

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PROBLEM TO BE SOLVED : To provide a field-effect transistor that is small in fluctuation amount of a threshold voltage to a BTS test, and that exhibits high reliability. SOLUTION : A field-effect transistor comprises : a base material; a protection layer; a gate insulating layer formed between the base material and the protection layer; a source electrode and a drain electrode formed so as to be contacted with the gate insulating layer; a semiconductor layer formed at least between the source electrode and the drain electrode, and contacted with the gate insulating layer, the source electrode, and the drain electrode; and a gate electrode contacted with the gate insulating layer, and opposed to the semiconductor layer via the gate insulating layer. The protection layer has : a first protection layer that contains a first composite metal oxide containing Si and an alkali earth metal; and a second protection layer formed so as to be contacted with the first protection layer, and that contains a second composite metal oxide containing an alkali earth metal and a rare-earth element. SELECTED DRAWING : Figure 3A COPYRIGHT : (C)2019, JPO&INPIT