MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

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PROBLEM TO BE SOLVED : To make small the difference of the dimensional reductive widths of hole patterns which is caused by the difference of the dense and rare distributive densities of the hole patterns, in the lithography using a heat-flow shrinkage method. SOLUTION : A resist pattern 3a including hole patterns 6b and a hole pattern 6c is formed on a semiconductor substrate 1, and a resin-layer pattern 7a is buried selectively in the hole pattern 6c of a region C wherein its distributive density is made low relatively to others. Further, when a heat flow is generated by subjecting the resist pattern 3a to a heat treatment, the dimensional reductive width of the hole pattern 6c is so suppressed in the region C wherein the distributive density of the hole pattern is made low as to make small the difference of the dimensional reductive widths of hole patterns which is caused by the difference of the high and low distributive densities of the hole patterns.