DEPOSITED FILM FORMING METHOD, FORMING METHOD OF SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE AND D

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PROBLEM TO BE SOLVED : To provide a deposited film forming method capable of forming silicon base oxide film uniformly on a substrate to be processed while restraining the plasma damage given to the substrate to be processed or the silicon base oxide film formed on the substrate to be processed. SOLUTION : Mixed gas comprises organic silicon compound gas having silicon atoms, carbon atoms, and oxygen atoms in at least one molecule; oxidizing gas; and rare gas having at least one kind or more among argon, krypton and xenon. The mixed gas is supplied into a plasma processing vessel so that the proportion Pr of the partial pressure of the rare gas becomes 15%≤Pr≤85%. Plasma is generated in the plasma processing vessel to decompose the organic silicon compound gas and the oxidizing gas by the plasma to form the oxide silicon film 22 on the substrate 21 to be processed.