A method of manufacturing a silicon nitride sintered body

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PROBLEM TO BE SOLVED : To produce a silicon nitride sintered compact having a coefft. of thermal expansion almost equal to that of silicon so that it is used for various parts for a semiconductor such as a susceptor, a chuck, a ring and a dummy wafer and excellent in strength characteristics and the obtain parts for the production of a semiconductor. SOLUTION : A compact contg. 50-70mol% silicon nitride, 10-30mol% oxide of a rare earth element, 5-20mol% aluminum oxide and 5-20mol% silicon dioxide is fired at 1, 400-1, 700 deg.C in an atmosphere of nitrogen to obtain the objective sintered compact consisting of a silicon nitride crystal phase and a grain boundary phase contg. the rare earth element, silicon, aluminum, oxygen and nitrogen and having 3.5-4.1ppm/ deg.C coefft. of thermal expansion in the temp. range from room temp. to 700 deg.C and >=400MPa strength at room temp.