PROCESS FOR GROWING AN EPITAXIAL FILM ON AN OXIDE SURFACE AND PRODUCT

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A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface (22), such as an al kaline earth oxide surface, involves the epitaxial build up of alternating constitu ent metal oxide planes of the perovskite or spinel (20, 26, 28). The first layer of metal oxide built upon the surface (22) includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface (22) includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layerin g sequence involved in the film build up reduces problem s which would otherwise result from the interfacial electrostatics at the first atom ic layers. and these oxides can be stabilized as commens urate thin films at a unit cell thickness or grown with high crystal quality to thickne sses of 0.5-0.7 .theta.m for optical device applications .