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Conductive ceramics composed of conductive AlN, its producing process, and a member for a semiconductor production system employing conductive ceramics. Conventional AlN ceramics is difficult to exhibit high conductivity at room temperature but the inventive conductive ceramics composed of conductive AlN exhibits conductivity of 10-10S/cm or above at room temperature because the grain boundary phase contains a rare earth nitride which forms a continuous conductive network meshed three-dimensionally.