Methods for manufacturing compound semiconductor and compound insulator using chemical reaction and

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PURPOSE : A method for manufacturing a compound semiconductor and a compound insulator is provided to induce chemical reaction and diffusion of elements by heating a layered structure having an inter layer of a rare earth metal and/or a transition metal sandwiched between dielectric layers. CONSTITUTION : A layered structure is formed by inserting an intermediate layer(120) between a plurality of dielectric layers(110, 130) including oxygen and/or sulfur. The intermediate layer includes rare earth transition metal that is highly reactive to oxygen and sulfur. The layered structure is heated to induce chemical reaction and diffusion of elements. © KIPO 2005