| 申请日期 | 2026-01-14 | 申请号 | US10838695 |
| 公开（公告）号 | US20040208218A1 | 公开（公告）日 | 2004-10-21 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | SHARP KABUSHIKI KAISHA | ||
| 简介 | A semiconductor light emitting element, includes : a substrate; a first conductive semiconductor layer formed on the substrate; a strained emission layer formed on the first conductive semiconductor layer; and a second conductive semiconductor layer formed on the strained emission layer, wherein the strained emission layer includes : an element other than a constituent element of the substrate; and a rare earth element. | ||
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