| 简介 |
Disclosed are an oxide semiconductor thin film, and a thin film transistor prepared therefrom. The oxide semiconductor thin film is obtained by mixing a few rare earth oxides into a metal oxide semiconductor thin film. The thin film transistor comprises a gate electrode (02), a channel layer (04) prepared with the oxide semiconductor thin film, a gate insulation layer located between the gate electrode and the channel layer, and a source electrode (06-1) and a drain electrode (06-2) respectively connected to two ends of the channel layer. The oxide semiconductor thin film material, and the thin film transistor prepared therefrom have an excellent illumination stability, and have a simple preparation process and strong applicability. |
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