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UNDERLAYER FILM-FORMING MATERIAL FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND PATTERN FOR 发明授权

2023-09-10 4980 700K 0

专利信息

申请日期 2026-03-14 申请号 KR1020147003592
公开(公告)号 KR101907481B1 公开(公告)日 2018-10-12
公开国别 KR 申请人省市代码 全国
申请人 미쯔비시 가스 케미칼 컴파니 인코포레이티드
简介 There is provided a novel material for forming an underlayer film for lithography, which has a high carbon concentration, a low oxygen concentration, a relatively high heat resistance and also a relatively high solvent solubility, and which can be applied to a wet process. The material for forming an underlayer film for lithography of the present invention contains a compound represented by the following general formula (1). (in formula (1), each X independently represents an oxygen atom or a sulfur atom, each R 1 independently represents a single bond or a 2n-valent hydrocarbon group having 1 to 30 carbon atoms, the hydrocarbon group may have a cyclic hydrocarbon group, a double bond, a hetero atom, or an aromatic group having 6 to 30 carbon atoms, and each R 2 independently represents a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, or a hydroxyl group, provided that at least one R 2 represents a hydroxyl group, each m is independently an integer of 1 to 6, and n is an integer of 1 to 4.)


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