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MULTI-LAYERED PLASMA RESISTANT COATING BY ATOMIC LAYER DEPOSITION 发明申请

2023-10-02 3100 5499K 0

专利信息

申请日期 2025-07-08 申请号 JP2018000888
公开(公告)号 JP2018150617A 公开(公告)日 2018-09-27
公开国别 JP 申请人省市代码 全国
申请人 APPLIED MATERIALS INCORPORATED
简介 PROBLEM TO BE SOLVED : To provide a coated chamber component and a method for coating the chamber component having a multi-layered plasma resistant coating. SOLUTION : An object is a chamber component having a plasma resistant coating deposited on a surface of the chamber component using an atomic layer deposition (ALD) process. The plasm resistant coating includes a stress relaxation layer having a thickness of about 10 nm-about 1.5 μm, and an about 10 nm-about 1.5 μm thick rare-earth metal oxide layer covering the stress relaxation layer. The rare-earth metal oxide coating layer includes Y2O3-ZrO2 solid-solution. The object is coated and has a layer uniformly coating a structure (for example having an aspect ratio of about 3 : 1-about 300 : 1). SELECTED DRAWING : Figure 3A COPYRIGHT : (C)2018, JPO&INPIT


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